##### 34. The donor and accepter impurities in an ab...

34. The donor and accepter impurities in an abrupt junction silicon diode are 1 x 1016 cm-3 and 5 x 1018 cm-3, respectively. Assume that the intrinsic carrier concentration in silicon ni = 1.5 x 1010 cm-3 at 300 K, $kT\over q$= 26mV and the permittivity of silicon εsi = 1.04 ×10-12 F/cm. The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are

(A) 0.7 V and 1 x 10-4 cm

(B) 0.86 V and 1 x 10-4 cm

(C) 0.7 V and 3.3 x 10-5 cm

(D) 0.86 V and 3.3 x 10-5 cm

Hint:

<div class="tex2jax"></div>