35. The doping concentrations on the p-side and n-side of a silicon diode are 1x1016 cm-3 and 1x1017 cm−3 , respectively. A forward bias of 0.3 V is applied to the diode. At T = 300K, the intrinsic carrier concentration of silicon ni=1.5x1010 cm−3 and \({kT\over q }=26mV\) The electron concentration at the edge of the depletion region on the p-side is 

 

(A) 2.3x109 cm−3 

(B) 1x1016 cm−3 

(C) 1x1017 cm−3

(D) 2.25x106 cm−3

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