36.  When a silicon diode having a doping...

36.  When a silicon diode having a doping concentration of NA = 9 × 1016 cm-3 on p-side and ND = 1 × 1016 cm-3 on n-side is reverse biased, the total depletion width is found to be 3 µm .  Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and  the maximum electric field in the depletion region, respectively, are

(A) 2.7 µm and 2.3 × 105 V/cm 

(B) 0.3 µm and 4.15 × 105 V/cm  
 

(C) 0.3 µm and 0.42 × 105 V/cm 

(D) 2.1 µm and 0.42 × 105 V/cm

Hint: 

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