8. At T = 300 K, the band gap and the intrinsi...

8. At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42 eV and 106 cm-3, respectively. In order to generate electron hole pairs in GaAs, which one of the wavelength (λC) ranges of incident radiation, is most suitable? (Given that: Plank’s constant is 6.62 × 10-34 J-s, velocity of light is 3 × 1010 cm/s and charge of electron is 1.6 × 10-19 C)

(A) 0.42 µm < λC < 0.87 µm

(B) 0.87 µm < λC < 1.42 µm

(C) 1.42 µm < λC < 1.62 µm

(D) 1.62 µm < λC < 6.62 µm

Hint: 

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