9. In the figure ln (ρi ) is plotted as a function of 1/T, where ρi the intrinsic resistivity of silicon, T is the temperature, and the plot is almost linear.
The slope of the line can be used to estimate
(A) Band gap energy of silicon (Eg)
(B) Sum of electron and hole mobility in silicon (µn +µp)
(C) Reciprocal of the sum of electron and hole mobility in silicon (µn +µp)-1
(D) Intrinsic carrier concentration of silicon (ni)