35. Consider two BJTs biased at the same collector current with area A1=0.2 µm×0.2 µm and
A2=300 µm ×300 µm . Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 1010 cm-3, and q = 1.6 × 10-19 C, the difference between the base-emitter voltages (in mV) of the two BJTs (i.e., VBE1 – VBE2) is _________________.

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