36.  An ideal MOS capacitor has boron doping-concentration of 1015 cm-3 in the substrate. When a gate voltage is applied, a depletion region of width 0.5 µm is formed with a surface (channel) potential of 0.2 V. Given that εo = 8.854 × 10-14 F/cm and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/µm) in the oxide region is __________________.

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